LPT-7 Diode-mkpụrụ ihe ngosi Laser siri ike-State
Nkọwapụta
| Semiconductor Laser | |
| Ike mmepụta CW | ≤500mW |
| Polarization | TE |
| Ogologo ogologo etiti | 808 ± 10 nm |
| Oke Okpomọkụ arụ ọrụ | 10 ~ 40 Celsius C |
| Ịnya ụgbọ ala ugbu a | 0 ~ 500mA |
| Nd: YVO4Crystal | |
| Ndokwa Doping | 0.1 ~ 3% |
| Akụkụ | 3 × 3 × 1 mm |
| Ịdị nro | < λ/10 @ 632.8 nm |
| Mkpuchi | AR @ 1064 nm, R<0.1%; 808="" t="">90% |
| KTP Crystal | |
| Ogologo Ogologo Ogologo Na-ebugharị | 0.35 ~ 4.5 µm |
| Ngwakọta Electro-Optic | r33= 36 pm/V |
| Akụkụ | 2 × 2 × 5 mm |
| Ngosipụta mmepụta | |
| Dayameta | % 6 mm |
| Radius nke curvature | 50 mm |
| He-Ne Alignment Laser | ≤ 1 mW @ 632.8 nm |
| Kaadị nlele IR | Oke nzaghachi spektral: 0.7 ~ 1.6 µm |
| Goggles Safety Laser | OD= 4+ maka 808 nm na 1064 nm |
| Igwe ọkụ anya | 2 μW ~ 200mW, 6 akpịrịkpa |
Ndepụta akụkụ
| Mba. | Nkọwa | Oke | Qty |
| 1 | Ụgbọ okporo ígwè anya | na isi na mkpuchi uzuzu, a na-etinye ọkụ ọkụ He-Ne laser n'ime isi | 1 |
| 2 | Onye na-ejide Laser He-Ne | ya na ebu | 1 |
| 3 | Nhazi oghere | f1 mm oghere nwere ebu | 1 |
| 4 | Iyo | f10 mm oghere ya na ebu | 1 |
| 5 | Ngosipụta mmepụta | BK7, f6 mm R = 50 mm nwere ihe njide 4-axis nwere ike imegharị na ihe ebu | 1 |
| 6 | KTP Crystal | 2 × 2 × 5 mm nwere njide 2-axis na-agbanwe agbanwe na onye na-ebu | 1 |
| 7 | Nd: YVO4 Crystal | 3 × 3 × 1 mm nwere njide 2-axis na-agbanwe agbanwe na onye na-ebu | 1 |
| 8 | 808nm LD (laser diode) | ≤ 500mW nwere njide 4-axis na-agbanwe agbanwe na ebu | 1 |
| 9 | Onye njide ihe nchọpụta | ya na ebu | 1 |
| 10 | Kaadị nlele infrared | 750 ~ 1600 nm | 1 |
| 11 | He-Ne Laser tube | 1.5mW@632.8 nm | 1 |
| 12 | Igwe ọkụ anya | 2 μW~200mW (oke 6) | 1 |
| 13 | Isi ihe nchọpụta | na mkpuchi na post | 1 |
| 14 | LD Onye njikwa ugbu a | 0 ~ 500mA | 1 |
| 15 | Ụdọ ọkụ | 3 | |
| 16 | Akwụkwọ ntuziaka | V1.0 | 1 |
Dee ozi gị ebe a ziga anyị ya









