LPT-7 Diode-mkpụrụ ihe ngosi Laser siri ike-State
Nkọwapụta
Semiconductor Laser | |
Ike mmepụta CW | ≤500mW |
Polarization | TE |
Ogologo ogologo etiti | 808 ± 10 nm |
Oke Okpomọkụ arụ ọrụ | 10 ~ 40 Celsius C |
Ịnya ụgbọ ala ugbu a | 0 ~ 500mA |
Nd: YVO4Crystal | |
Ndokwa Doping | 0.1 ~ 3% |
Akụkụ | 3 × 3 × 1 mm |
Ịdị nro | < λ/10 @ 632.8 nm |
Mkpuchi | AR @ 1064 nm, R<0.1%;808="" t="">90% |
KTP Crystal | |
Ogologo Ogologo Ogologo Na-ebugharị | 0.35 ~ 4.5 µm |
Ngwakọta Electro-Optic | r33= 36 pm/V |
Akụkụ | 2 × 2 × 5 mm |
Ngosipụta mmepụta | |
Dayameta | % 6 mm |
Radius nke curvature | 50 mm |
He-Ne Alignment Laser | ≤ 1 mW @ 632.8 nm |
Kaadị nlele IR | Oke nzaghachi spektral: 0.7 ~ 1.6 µm |
Goggles Safety Laser | OD= 4+ maka 808 nm na 1064 nm |
Igwe ọkụ anya | 2 μW ~ 200mW, 6 akpịrịkpa |
Ndepụta akụkụ
Mba. | Nkọwa | Oke | Qty |
1 | Ụgbọ okporo ígwè anya | na isi na mkpuchi uzuzu, a na-etinye ọkụ ọkụ He-Ne laser n'ime isi | 1 |
2 | Onye na-ejide Laser He-Ne | ya na ebu | 1 |
3 | Nhazi oghere | f1 mm oghere ya na ebu | 1 |
4 | Iyo | f10 mm oghere ya na ebu | 1 |
5 | Ngosipụta mmepụta | BK7, f6 mm R = 50 mm nwere ihe njide 4-axis nwere ike imegharị na ihe ebu | 1 |
6 | KTP Crystal | 2 × 2 × 5 mm nwere njide 2-axis na-agbanwe agbanwe na onye na-ebu | 1 |
7 | Nd: YVO4 Crystal | 3 × 3 × 1 mm nwere njide 2-axis na-agbanwe agbanwe na ebu | 1 |
8 | 808nm LD (laser diode) | ≤ 500mW nwere njide 4-axis na-agbanwe agbanwe na ebu | 1 |
9 | Onye njide ihe nchọpụta | ya na ebu | 1 |
10 | Kaadị nlele infrared | 750 ~ 1600 nm | 1 |
11 | He-Ne Laser tube | 1.5mW@632.8 nm | 1 |
12 | Igwe ọkụ anya | 2 μW~200mW (oke 6) | 1 |
13 | Isi ihe nchọpụta | na mkpuchi na post | 1 |
14 | LD Onye njikwa ugbu a | 0 ~ 500mA | 1 |
15 | Ụdọ ọkụ | 3 | |
16 | Akwụkwọ ntuziaka | V1.0 | 1 |
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